The
IEEE Semiconductor Interface Specialists conference is to be held in Arlington, VA on December 5-7, 2013 with a Tutorials to be held on Dec 4. Invited talks include:
- Materials Selection and Device Design for Low Power Tunnel Transistors
- Growth and characterization of silicene and germanene
- SymFET: A novel Graphene-Insulator-Graphene Tunneling Device
- Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density
- Low Resistance MIS Contacts to Ge and III-V Devices
- Reducing EOT and Interface Trap Densities of High-k/III-V Gate Stacks
- Frequency Dispersion in CV plots of MOS Devices on III-V Substrates: Disorder-Induced Gap States or Border Traps
Tutorials include:
- Resistive switching materials and devices for future memory applications
- Understanding the nanoscale MOSFET
- Interface state analysis on non-silicon semiconductors and the role of heterostructures
- Physical characterization of thin oxide films by XRD and XPS: From conventional laboratory to modern synchrotron techniques
- Introduction to charge pumping and its applications