Mark T. Bohr, Sr. Fellow and Director of Process Architecture & Integration describes Intel's Tri-gate transistor development: from finFET concepts to Tri-gate transistors — part 1 in this short interview. The tri-gate FET was based on the finFET that a Japanese company developed in 1989. Intel started doing development on the technology in around 2000. The Tri-gate is different in that it adds a channel on top of the fin and the gate wraps around three sides of the fin. The Fin is 8 nm wide and has a 60 nm pitch that is all fabricated using 193 nm spacer beam pattering lithography.
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