Intel presented a paper on the new FinFET technology that in now calls a tri-gate transistors. The tri-grate transistor is triangular in shape where prior versions have been rectangular. Gold Standard Simulation Ltd. built a atom model and simulated a 22nm finFET with a triangular channel. The purpose of the simulation was to determine the advantage this triangular shape provides. It's still not clear, but it's interesting to see the channel current density move from the center out to the interface as the transistor is turned on.
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Update: In his blog, Ed McKenan at SemiWiki.com says that the Intel 22 nm tri-gate transistor offers lower leakage and can operate on 0.7 V in standby mode. Intel claims a 50% power reduction.
Update: In his blog, Ed McKenan at SemiWiki.com says that the Intel 22 nm tri-gate transistor offers lower leakage and can operate on 0.7 V in standby mode. Intel claims a 50% power reduction.