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NanoBlog

ALD system at 22nm

morreale Sunday 31 of July, 2011
Applied Materials has introduced a new ALD Centura Integrated Gate Stack system that can fabricate transistors at the 22nm node. The system employs a cluster arrangement so that the dielectric, k-dielectric, and metal gate stack can be fabricated in a vacuum without introducing an air break in the process. The two videos are quite interesting.

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