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NanoBlog

Sept 2014 IEEE Journal of the Electron Devices Society

morreale Tuesday 02 of September, 2014
The Sept 2014 issue of the IEEE Journal of the Electron Devices Society is now available and is open access. The article in this months issue include

  • Graphene for Electron Devices: The Panorama of a Decade
  • On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors
  • Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C
  • All-Graphene Planar Double Barrier Resonant Tunneling Diodes
  • First Demonstration of Ultra-Thin SiGe-Channel Junctionless
  • Accumulation-Mode (JAM) Bulk FinFETs on Si Substrate with PN Junction-Isolation Scheme
  • Sub-10-nm Asymmetric Junctionless Tunnel Field-Effect Transistors
  • Solid-State Image Sensors